Improvements Sought in Nitride-Based LEDs
A team of engineers at National Cheng Kung University in Tainan, Taiwan, has reported the results of its investigations into the fabrication of InGaN/GaN multiple quantum-well green LEDs by metallorganic chemical vapor deposition. The group hopes that the work will enable the continued development of more efficient high-brightness green LEDs.
Kodigala Subba Ramaiah, a member of the team who currently is at Rensselaer Polytechnic Institute in Troy, N.Y., explained that nitride-based green...
Photonics Spectra, October 2004