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Spire to Develop Terahertz Laser Technology

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BEDFORD, Mass., June 24 -- Spire Corp., a Bedford, Mass.-based manufacturer of photovoltaic module manufacturing equipment and surface treatments for the biomedical industry, is developing nano-engineered gallium arsenide layers for fabrication of miniature terahertz (THz) lasers under an Air Force Office of Scientific Research (AFOSR)-funded, $99,000 Phase I Small Business Technology Transfer Research project. The project involves the design of a new, gallium arsenide-based nano-engineered epitaxial wafer structure that can be cost-effectively produced in large quantities. Epitaxial wafers...Read full article

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    Published: June 2004
    Glossary
    gallium arsenide
    Gallium arsenide (GaAs) is a compound semiconductor material composed of gallium (Ga) and arsenic (As). It belongs to the III-V group of semiconductors and has a zincblende crystal structure. GaAs is widely used in various electronic and optoelectronic devices due to its unique properties. Direct bandgap: GaAs has a direct bandgap, which allows for efficient absorption and emission of photons. This property makes it suitable for optoelectronic applications such as light-emitting diodes...
    AFOSRAir Force Office of Scientific Researchdefensegallium arsenideindustrialminiature terahertznano-engineeredNews & FeaturesSPIREterahertz lasersTHz

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