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Sheaumann Laser Expands, Relocates Operations

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Sheaumann Laser Inc. has opened a new 57,800-sq-ft facility in Billerica, Massachusetts. The manufacturer of semiconductor lasers announced its expansion and relocation in July. Supported by a $2.34 million grant from the Massachusetts Manufacturing Innovation Initiative (M2I2) and matching funds from the company, Sheaumann will increase both its workforce and production capabilities to meet demand for laser-based technologies in multiple industries. Sheaumann specifically plans to broaden its wafer growth capabilities, expanding its existing near-infrared gallium arsenide (GaAs)...Read full article

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    Published: August 2020
    Glossary
    indium phosphide
    Indium phosphide (InP) is a compound semiconductor material composed of indium (In) and phosphorus (P). It belongs to the III-V group of semiconductors, where elements from groups III and V of the periodic table combine to form a variety of important semiconductor materials. Indium phosphide is known for its favorable electronic and optical properties, making it widely used in the fabrication of optoelectronic devices. Key features and properties of indium phosphide include: Bandgap:...
    gallium arsenide
    Gallium arsenide (GaAs) is a compound semiconductor material composed of gallium (Ga) and arsenic (As). It belongs to the III-V group of semiconductors and has a zincblende crystal structure. GaAs is widely used in various electronic and optoelectronic devices due to its unique properties. Direct bandgap: GaAs has a direct bandgap, which allows for efficient absorption and emission of photons. This property makes it suitable for optoelectronic applications such as light-emitting diodes...
    LasersSheaumann LaserAmericasMassachusettsexpansionsemiconductor laser components and systemssemiconductor laser manufacturingindium phosphidegallium arsenideMassachusetts Manufacturing Innovation InitiativeBusinessfundingsemiconductor laserslight speed

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