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Meadowlark Optics - Wave Plates 6/24 LB 2024
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InGaAs 1100-1700nm Quad Photodiode

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Advanced Photonix Quad InGaAsAdvanced Photonix’s new 1100-1700 nm Bandpass InGaAs Quadrant Photodiodes feature a 2 mm diameter active area. The APX-QPD-InG-3.1 is a hermetic, Leadless Chip Carrier (LCC) Surface-Mount Device (SMD) and features a 0.03 mm element gap and an AR-coated silicon window that blocks NIR light. The devices meet NASA’s low-outgassing standards for space applications and are ideal for positioning and beam-centering applications. The device has a reverse voltage of 10V; operating temperatures range from -40 °C to +75 °C  and storage temperatures range from -40 °C to +100 °C.

To learn more about this innovative InGaAs quad photodiode and view the responsivity chart, download the data sheet here: https://www.advancedphotonix.com/wp-content/uploads/2015/07/DS-APX-QPD-InG-3.1.pdf.



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Sensors & DetectorsProducts1100-1700 nm InGaAs quad photodetectorsleadless chip carrierLCCSMDsurface-mount devicesQuadrant photodiodesindium gallium arsenideInGaAsNIR light blocking photodetectorscircular active area quad photodiodesbeam-centering applications

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