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50 products
Photonics Products
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Opto Diode Corporation x
High-Power GaAIAs IRLED Illuminator - OD-663-850
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Through Hole
TO Package:
Other
High Power:
Yes
Color:
Infrared
Wavelength (nm):
850 - 850
Power Output:
425mW
Half Intensity Beam Angle (degrees):
120
Fall time:
100 nsec
Lead soldering temperature:
260 °C
Reverse Breakdown Voltage:
5 V
Premier Product
Photodiode NXIR-RF36
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Photodiodes
Active Area:
5 mm²
Responsivity @1064 nm:
0.38 A/W
Responsivity @850 nm:
0.65 A/W
Photodiode NXIR-RF100C
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Photodiodes
Light Spectrum:
NIR
Active Area:
1 mm²
Responsivity @1064 nm:
0.35 A/W
Responsivity @850 nm:
0.62 A/W
Photodiode ODD-900-001
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
mm2
Operating Spectral Range:
730 nm - 1100 nm
Peak Sensitivity:
940 nm
Photodiode ODD-900-002
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
8 mm²
Operating Spectral Range:
400 nm - 1100 nm
Peak Sensitivity:
940 nm
Mid-IR Detector - BXT2S-28T
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
IR
Light Spectrum:
MWIR
Active Area (Circular):
20 mm²
Capacitance:
1.55 (typ.) to 3 (max.) nF
Material:
PbSe
IR Detector BXF-2
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
IR
Sensor Width:
2
Sensor Height:
2
Active Element Area:
4 mm²
Element Operating Temp.:
+23 °C
Peak Sensitivity (min.):
3.6 µm
IR Detector - BXP-25E
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
IR
Light Spectrum:
NIR
Active Area:
4 mm²
Detectivity (D*) Ranges:
2.0 × 10(10) (D*)
Material:
PbSe
IR Detector - BXT2S-38T
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
IR
Light Spectrum:
VIS,NIR
Active Area:
9 mm²
Material:
PbSe
ResponseTime:
12 µsec
IR Detector - BXT2S-68T
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
IR
Light Spectrum:
VIS,NIR
Active Area:
36 mm²
Material:
PbSe
ResponseTime:
12 µsec
Narrow-Angle, Ultlra-High-Power IR Emitter: OD-110L
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Through Hole
TO Package:
TO39
High Power:
Yes
Color:
Infrared
Wavelength (nm):
850 - 850
Power Output:
110mW
Half Intensity Beam Angle (degrees):
7
Fall time:
20 nsec
Lead soldering temperature:
260 °C
Reverse voltage:
5 V
Large, Rectangular Photodiode - AXUV300C
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Photodiodes
Sensor Width:
21.56
Sensor Height:
15.36
Light Spectrum:
UV,VIS,NIR,Multispectral
Breakdown Voltage:
5 V, min.; 25 V typical
Capacitance:
25 nF, typical.; 40 nF, max.
Detection:
Radiation, Electrons, Photons
Photodiode UVG5S
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Photodiodes
Light Spectrum:
UV
Active Area (circular):
5 mm2
Capacitance:
2 nF
Dark Current, ldr:
1 nA
High-Power GaAIAs IRLED Illuminator - OD-663
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Through Hole
TO Package:
Other
High Power:
Yes
Color:
Infrared
Wavelength (nm):
880 - 880
Power Output:
170mW
Half Intensity Beam Angle (degrees):
120
Fall time:
1 µsec
Power Output at 8 A:
3500 mW
Reverse Breakdown Voltage:
30 V
Medium-Angle, High-Temp IR Emitter: OD-850LHT
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Through Hole
TO Package:
TO46
High Power:
Yes
Color:
Infrared
Wavelength (nm):
850 - 850
Power Output:
35mW
Half Intensity Beam Angle (degrees):
35
Fall time:
20 nsec
Lead soldering temperature:
260 °C
Reverse voltage:
5 V
High Rel Rad-Hard IR Emitter: OD-800W
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Through Hole
TO Package:
TO46
High Power:
Yes
Color:
Infrared
Wavelength (nm):
810 - 810
Power Output:
3mW
Half Intensity Beam Angle (degrees):
80
Capacitance:
150 pF
Fall time:
60 nsec
Lead soldering temperature:
240 °C
High Rel Rad-Hard IR Emitter: OD-800L
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Through Hole
TO Package:
TO46
High Power:
Yes
Color:
Infrared
Wavelength (nm):
810 - 810
Power Output:
3mW
Half Intensity Beam Angle (degrees):
35
Capacitance:
150 pF
Fall time:
60 nsec
Lead soldering temperature:
240 °C
High Rel Rad-Hard IR Emitter: OD-800F
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Through Hole
TO Package:
TO46
High Power:
Yes
Color:
Infrared
Wavelength (nm):
810 - 810
Power Output:
3mW
Half Intensity Beam Angle (degrees):
8
Capacitance:
150 pF
Fall time:
60 nsec
Lead soldering temperature:
240 °C
Photodiode UVG100
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Photodiodes
Sensor Width:
100
Sensor Height:
100
Light Spectrum:
UV
Active Area:
100 mm²
Quantum Efficiency:
100%
Responsivity (test conditions at 254 nm):
0.09 A/W typical
High Temp GaAIAs IR Emitter: OD-110LISOLHT
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Through Hole
TO Package:
TO39
High Power:
Yes
Color:
Infrared
Wavelength (nm):
880 - 880
Power Output:
100mW
Half Intensity Beam Angle (degrees):
7
Fall Time:
20 nsec
Lead Soldering Temperature:
260 °C
Reverse Voltage:
5 V
Large, Square Radiation Detector: AXUV576C
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Photodiodes
Sensor Width:
576.5
Sensor Height:
576.5
Light Spectrum:
XRAY,Multispectral
Large, Square Active Area:
576.5 mm x 576.5 mm
Lead-SolderingTemperature:
260 °C
Min. Reverse Breakdown:
5V
Wide Angle, High-Temp GaAIAs IR LED- OD-110WISOLHT
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Through Hole
TO Package:
TO39
High Power:
Yes
Color:
Infrared
Wavelength (nm):
880 - 880
Power Output:
140mW
Half Intensity Beam Angle (degrees):
110
Fall Time:
20 nsec
Lead Soldering Temperature:
260 °C
Reverse Breakdown Voltage:
5 V
Photodiode UVG5
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Photodiodes
Sensor Width:
5
Sensor Height:
5
Light Spectrum:
UV
Active Area (Circular):
Ø 5 mm2 (typ.)
Capacitance:
2 nanofarads (nF)
Responsivity @254 nm:
0.115 A/W (typ.)
Photodetector - SXUV100TF135B
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Other
Light Spectrum:
UV
Active Area:
100 mm²
Low Capacitance:
260 pF
Reverse Bias Voltage:
12V
Photodetector - SXUV100TF135
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Other
Light Spectrum:
UV
Active Area:
100 mm²
Low Capacitance:
260 pF
Reverse Bias Voltage:
12V
Photodiode UVG20S
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Photodiodes
Light Spectrum:
UV
Active Area (circular):
24 mm2
Responsivity @ 254 nm:
0.115 A/W (typical)
Rise Time:
4 µsec
Photodiode UVG20C
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Photodiodes
Light Spectrum:
UV
Capacitance:
4 nF (Typ.) to 10 nF (Max.)
Circular Active Area (Typ.):
19 mm²
Internal Quantum Efficiency:
100%
Photodiode UVG12
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Photodiodes
Light Spectrum:
UV,VIS
Circular Active Area:
13.2 mm²
Detection Wavelength Range:
193 nm - 400 nm
Quantum Efficiency:
100% in UV and Visible Regions
Photodiode - AXUV20A
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Photodiodes
Sensor Width:
5.5
Sensor Height:
5.5
Light Spectrum:
UV,VIS,NIR
Capacitance:
4 nF, typical.; 10 nF, max.
Circular Photodiode:
5.5 mm²
Detection:
Radiation, Electron, Photon
Photodiode - AXUV63HS1
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Photodiodes
Sensor Width:
9
Sensor Height:
9
Light Spectrum:
XRAY
High-Speed Circular Active Area:
9 mm²
Lead-SolderingTemperature:
260 °C
Maximum Dark Current:
100 nA
Photodiode NXIR-5C
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Photodiodes
Light Spectrum:
NIR
Active Area (circular):
5 mm²
Responsivity @ 1064 nm:
0.35 A/W
Responsivity @850 nm:
0.62 A/W
Photodiode - AXUV20HS1
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Photodiodes
Light Spectrum:
XRAY
Electron Detection:
200 eV
Grid lines:
5 µm
High-Speed Circular Active Area:
5 mm Ø
Photodetector - SXUV5
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Other
Light Spectrum:
UV
Capacitance:
500 - 1500 pF
Circular Active Area:
5 mm2
Response Time:
1 - 2 nsec
High-Power GaAlAs IRLED Illuminator: OD-669-850
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Other
TO Package:
Other
High Power:
Yes
Color:
Infrared
Wavelength (nm):
850 - 850
Power Output:
1250mW
Half Intensity Beam Angle (degrees):
120
Fall Time:
200 nsec
Power Dissipation:
6 W
Reverse Breakdown Voltage:
30 V
High-Power GaAlAs IRLED Illuminator: OD-669
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Other
TO Package:
Other
High Power:
Yes
Color:
Infrared
Wavelength (nm):
880 - 880
Power Output:
500mW
Half Intensity Beam Angle (degrees):
120
Capacitance:
11 pF
Fall Time:
3 µsec
Power Dissipation:
6 W
High-Power GaAlAs IRLED Illuminator: OD-666
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Other
TO Package:
Other
High Power:
Yes
Color:
Infrared
Wavelength (nm):
880 - 880
Power Output:
330mW
Half Intensity Beam Angle (degrees):
120
Capacitance:
15 pF
Fall Time:
2 µsec
Power Dissipation:
4 W
High-Power GaAlAs IRLED Illuminator: OD-669-850
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Through Hole
TO Package:
Other
High Power:
Yes
Color:
Infrared
Wavelength (nm):
850 - 850
Power Output:
1250mW
Half Intensity Beam Angle (degrees):
120
Continuous Forward Current:
370 mA
Fall Time:
200 nsec
Reverse Breakdown Voltage:
30 V
Wide-Angle, High-Temp IR Emitter: OD-850WHT
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Through Hole
TO Package:
TO46
High Power:
Yes
Color:
Infrared
Wavelength (nm):
850 - 850
Power Output:
26mW
Half Intensity Beam Angle (degrees):
80
Fall time:
20 nsec
Lead soldering temperature:
260 °C
Reverse voltage:
5 V
Wide-Angle, High-Power IR Emitter: OD-850W
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Through Hole
TO Package:
TO46
High Power:
Yes
Color:
Infrared
Wavelength (nm):
850 - 850
Power Output:
40mW
Half Intensity Beam Angle (degrees):
80
Fall time:
20 nsec
Lead soldering temperature:
260 °C
Reverse voltage:
5 V
Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-250
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Through Hole
TO Package:
TO39
High Power:
Yes
Color:
Infrared
Wavelength (nm):
850 - 850
Power Output:
250mW
Half Intensity Beam Angle (degrees):
110
Fall time:
20 nsec
Lead soldering temperature:
260 °C
Reverse Breakdown Voltage:
30 V
Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-110W
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Through Hole
TO Package:
TO39
High Power:
Yes
Color:
Infrared
Wavelength (nm):
850 - 850
Power Output:
140mW
Half Intensity Beam Angle (degrees):
110
Fall time:
20 nsec
Lead soldering temperature:
260 °C
Reverse Breakdown Voltage:
30 V
Narrow-Angle, High-Temp IR Emitter: OD-850FHT
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Through Hole
TO Package:
TO46
High Power:
Yes
Color:
Infrared
Wavelength (nm):
850 - 850
Power Output:
22mW
Half Intensity Beam Angle (degrees):
8
Fall time:
20 nsec
Lead soldering temperature:
260 °C
Reverse voltage:
5 V
Medium-Angle, High-Power IR Emitter: OD-850L
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Through Hole
TO Package:
TO46
High Power:
Yes
Color:
Infrared
Wavelength (nm):
850 - 850
Power Output:
35mW
Half Intensity Beam Angle (degrees):
35
Fall time:
20 nsec
Lead soldering temperature:
260 °C
Reverse voltage:
5 V
Visible LED: OD-685C
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Surface Mount
TO Package:
Other
Color:
Red
Power Output:
2mW
Forward Voltage (V):
2.2
Forward Current:
50mA
Operating Temperature (°C):
-40 - 125
Max. Junction Current:
125 °C
Peak Forward Current:
100 mA
Power Dissipation:
120 mW
High-Power Infrared Emitter: OD-850F
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Through Hole
TO Package:
TO46
High Power:
Yes
Color:
Infrared
Wavelength (nm):
850 - 850
Power Output:
30mW
Half Intensity Beam Angle (degrees):
8
Fall time:
20 nsec
Lead soldering temperature:
260 °C
Reverse voltage:
5 V
High-Output Red LED: OD-624L
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Through Hole
TO Package:
TO39
High Power:
Yes
Color:
Red
Wavelength (nm):
624 - 635
Power Output:
170mW
Half Intensity Beam Angle (degrees):
7
Lead Soldering Temperature:
260 °C
Reverse Voltage:
10 V
High-Output Blue LED: OD-469L
Opto Diode Corporation
Category:
Illumination / LEDs & Emitters
Type:
Through Hole
TO Package:
TO39
High Power:
Yes
Color:
Blue
Wavelength (nm):
465 - 475
Power Output:
170mW
Half Intensity Beam Angle (degrees):
7
Lead Soldering Temperature:
260 °C
Power Dissipation:
1000 mW
Reverse Voltage:
5 V
Photodetector - AXUV100TF400
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Other
Light Spectrum:
UV
Active Area:
10 x 10 mm
Operating/Storage Temps. in ambient environments:
-10 °C to +40 °C
Operating/Storage Temps. in nitrogen or vacuum environments:
-20 °C to +80 °C
Photodetector - AXUV100TF030
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Other
Light Spectrum:
UV
Active Area:
10 x 10 mm
Operating/Storage Temps. in ambient environments:
-10 °C to +40 °C
Operating/Storage Temps. in nitrogen or vacuum environments:
-20 °C to +80 °C
Photodetector SXUV20C
Opto Diode Corporation
Category:
Sensing & Detection / Sensors & Detectors
Type:
Other
Light Spectrum:
UV
Active Area (Circular):
20 mm²
Capacitance:
1.55 (typ.) to 3 (max.) nF
Rise Time:
2 µsec
Photonics Products
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