Definition of complementary metal-oxide semiconductor

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Photonics Dictionary

complementary metal-oxide semiconductor: Complementary metal-oxide-semiconductor (CMOS) refers to a technology used in the fabrication of integrated circuits, particularly semiconductor devices like microprocessors, memory chips, and image sensors.

Here is a breakdown of the components in the term:

Complementary: CMOS technology uses both types of semiconductor transistors: N-type (negative) and P-type (positive). The combination of these two types allows for more efficient and lower power consumption operation.

Metal-oxide-semiconductor: MOS refers to the type of transistor used in CMOS technology. In a MOS transistor, a metal gate is separated from the semiconductor by an insulating layer of oxide. The conductivity of the transistor is controlled by the voltage applied to the gate.

CMOS technology has several advantages, including low power consumption, high noise margins, and the ability to integrate both digital and analog functions on the same chip. These features make it widely used in the design and manufacturing of electronic components, especially in applications where power efficiency is crucial, such as in portable devices and integrated circuits for various electronic systems. Additionally, CMOS technology is prevalent in the creation of image sensors for cameras, as it allows for low power consumption and high integration density.

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