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Navy Gives JMAR $3.4 M for X-Ray Proximity Masks

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SAN DIEGO, April 23 -- JMAR Technologies Inc., a developer of advanced lasers, collimated plasma lithography (CPL) systems and semiconductor production services, announced that its Systems Division in Burlington, Vt., has been awarded an additional $3.4 million in funding from the Naval Air Warfare Center in Patuxent River, Md., to procure sub-100 nm geometry next-generation lithography masks needed to produce advanced semiconductors using JMAR's new CPL system, which is currently undergoing testing at the company's Burlington facility. The award, funded by the Defense Advanced Research...Read full article

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    Published: April 2003
    Glossary
    gallium arsenide
    Gallium arsenide (GaAs) is a compound semiconductor material composed of gallium (Ga) and arsenic (As). It belongs to the III-V group of semiconductors and has a zincblende crystal structure. GaAs is widely used in various electronic and optoelectronic devices due to its unique properties. Direct bandgap: GaAs has a direct bandgap, which allows for efficient absorption and emission of photons. This property makes it suitable for optoelectronic applications such as light-emitting diodes...
    advanced laserscollimated plasma lithographyCommunicationsCPLdefensegallium arsenideindustrialJmar Technologiesmillimeter wave integrated circuitsNews & Featuresnext-generation lithographysemiconductors using JMAR's new CPL systemx-ray masks

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