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LASER COMPONENTS Detector Group Opens Facility

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LASER COMPONENTS Detector Group opened its new 29,000-sq-ft facility in Chandler, Ariz. The Phoenix-area facility features cleanrooms optimized to ensure safe materials transfer and strict particle control; floor, workstation, and cleanroom clothing are all protected against electrostatic discharge. LASER COMPONENTS Detector Group moved to its new location in Chandler, Ariz., after a year of construction. Courtesy of LASER COMPONENTS. LASER COMPONENTS’ Detector Group develops and manufactures semiconductor detectors, including for silicon and InGaAs avalanche photodiodes and...Read full article

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    Published: December 2020
    Glossary
    avalanche photodiode
    A device that utilizes avalanche multiplication of photocurrent by means of hole-electrons created by absorbed photons. When the device's reverse-bias voltage nears breakdown level, the hole-electron pairs collide with ions to create additional hole-electron pairs, thus achieving a signal gain.
    indium gallium arsenide
    Indium gallium arsenide (InGaAs) is a semiconductor compound composed of indium (In), gallium (Ga), and arsenic (As). It belongs to the III-V group of semiconductors and is commonly used in optoelectronic devices, photovoltaics, and high-speed electronics due to its unique properties. Bandgap engineering: The bandgap of InGaAs can be tailored by adjusting the ratio of indium to gallium atoms in the compound. By varying the composition, the bandgap can be tuned to cover a wide range of...
    BusinessAmericasLaserssemiconductor lasersmanufacturingLaser Componentslaser components detector groupfacility expansionfacility groundbreakingFacilityfacility launchavalanche photodiodediodesphotodiodesLaser Safetyindium gallium arsenideSensors & Detectorslight speed

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