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Consortium Aims to Bolster Europe's Silicon Photonics Value Chain

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German-based silicon chips foundry X-FAB is leading the European Union-funded consortium photonixFAB to boost innovation within the European silicon photonics industry, and to increase sovereignty in the semiconductor and photonics industries in Europe. The project seeks to increase access to both low-loss silicon nitride (SiN)- and silicon-on-insulator (SOI)-based photonics platforms with indium phosphide (InP) and lithium niobate (LNO) heterogenous integration capabilities. The public/private photonixFAB additionally comprises research institutes, which will focus on the development...Read full article

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    Published: June 2023
    Glossary
    lithium niobate
    A crystalline ferroelectric material used primarily as a substrate and an active medium for thin-film optical modulators and switches. It possesses very high electro-optic and piezoelectric coefficients. LiNbO3.
    germanium
    A crystalline semiconductor material that transmits in the infrared.
    indium phosphide
    Indium phosphide (InP) is a compound semiconductor material composed of indium (In) and phosphorus (P). It belongs to the III-V group of semiconductors, where elements from groups III and V of the periodic table combine to form a variety of important semiconductor materials. Indium phosphide is known for its favorable electronic and optical properties, making it widely used in the fabrication of optoelectronic devices. Key features and properties of indium phosphide include: Bandgap:...
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