TOKYO, March 5 -- Nichia Corp. said it has developed high-power indium gallium nitride LEDs with ten times the power of current devices.
According to the company, the LEDs overcome low power limitations of current parts by increasing the area of the InGaN chip to 1 mm² and powering the chip with up to two watts of electrical power. At a 350 mA current, photometric luminous flux for the packaged LEDs is 23 lm for white, 7 lm for blue, 28 lm for blue-green, and 20 lm for green.