MUNICH, June 14 -- Infineon Technologies AG and Canon Inc. are launching a joint research project for the development of photolithography systems utilizing 157-nm technology via F2 laser illumination.
    The joint effort is expected to accelerate the development of 157 nm lithography systems, and the subsequent introduction of these systems in the manufacturing process of semiconductor devices. Infineon plans to introduce 157-nm lithography for the production of memory and logic products at its advanced production sites.
    Infineon will join in efforts to speed up the realization of Canon's first-generation F2 exposure system, which is scheduled for delivery to Infineon Technologies in the second quarter of 2003. Until that time joint research activities will be conducted at Canon Inc.'s Utsunomiya Optical Products Operations, comprising the gathering of process data regarding actual device manufacturing to enable the development of 70-nm compatible exposure systems.
    Afterwards, the research will move to Infineon's facilities for joint process development through the end of 2004. Canon requires various process data regarding actual device manufacturing in order to develop 70 nm-compatible F2 exposure systems to succeed its ArF laser lithography tool lineup.