AACHEN, Germany, June 26 -- The Polish III-V community is now facing new targets in the field of III-Nitrides R&D. The Institute of Electronic Materials Technology (ITME), in Warszawa, Poland, has recently ordered an AIX 200/4 RF-S MOCVD system for the growth of GaN based structures for lasers and LEDs. In addition to the existing AIX 200 MOCVD system that has been used for the fabrication of GaAs and InP based structures, the new AIXTRON reactor will play an important role in the Polish GaN project.
    The AIX 200/4 RF-S reactor was chosen for its performance and its high degree of flexibility, especially with respect to in situ measurement methods.
    "We placed a repeat order because this reactor is clearly one of the most elaborated GaN MOCVD systems," said Zygmunt Luczinsky, head of ITME. "The unique process know-how that is available for this type of MOCVD system will allow us to have a very quick and efficient start of our GaN activities. In future, we plan to purchase another AIX 200/4 system for the fabrication of InP based structures."