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Meadowlark Optics - Wave Plates 6/24 LB 2024

Raman and Photoluminescence Characterization of Gallium Nitride

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Thursday, December 5, 2024
Edinburgh Instruments Ltd.

Due to its favorable thermal and electrical properties, gallium nitride (GaN) is a semiconductor with the potential to replace silicon in small, high powered electrical devices. Manufactures of such devices must ensure mechanical and electrical homogeneity to prevent adverse performance. In this application note, we demonstrate how Raman and photoluminescence microscopy can be used for characterization and analysis of GaN.

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File: Raman_and_Photoluminescence_Characterisation_of_Gallium_Nitride.pdf (1.23 MB)
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laser systemssemiconductorsensors and detectorsgallium nitride characterisationgallium nitirde semiconductorgallium nitride raman microsocpyphotoluminescence gallium nitride
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