Photodiodes
Opto Diode CorporationRequest Info
CAMARILLO, Calif., Dec. 12, 2017 —
The SXUV100TF135 and SXUV100TF135B photodiodes from Opto Diode Corp. feature integrated thin-film filters.
The detectors each feature a 100-sq-mm active area and a
directly deposited thin-film filter for detection between 12 and 18 nm. Both
detectors have typical responsivity of 0.09 A/W at 13.5 nm and are optimized for
different electrical performance. The photodiodes are ideal for use in applications such
as laser power monitoring, semiconductor photolithography and metrology systems
that utilize extreme UV light.
The SXUV100TF135 model is optimized for higher speed reverse bias voltage
operation. The device has low capacitance, typically 260 pF, with a reverse bias
voltage of 12V. The SXUV100TF135B is optimized for zero bias voltage operation
where low dark current is of paramount importance. The detector has a high shunt
resistance greater than 10 MΩ.
https://www.optodiode.com
/Buyers_Guide/Opto_Diode_Corporation/c11066
Published: December 2017
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