InGaAs 1100-1700nm Quad Photodiode
Advanced PhotonixRequest Info
Advanced Photonix’s new 1100-1700 nm Bandpass InGaAs Quadrant Photodiodes feature a 2 mm diameter active area. The APX-QPD-InG-3.1 is a hermetic, Leadless Chip Carrier (LCC) Surface-Mount Device (SMD) and features a 0.03 mm element gap and an AR-coated silicon window that blocks NIR light. The devices meet NASA’s low-outgassing standards for space applications and are ideal for positioning and beam-centering applications. The device has a reverse voltage of 10V; operating temperatures range from -40 °C to +75 °C and storage temperatures range from -40 °C to +100 °C.
To learn more about this innovative InGaAs quad photodiode and view the responsivity chart, download the data sheet here:
https://www.advancedphotonix.com/wp-content/uploads/2015/07/DS-APX-QPD-InG-3.1.pdf.
https://www.advancedphotonix.com/wp-content/uploads/2015/07/DS-APX-QPD-InG-3.1.pdf
/Buyers_Guide/Advanced_Photonix/c303
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