High-Power IR Emitters
Opto Diode CorporationRequest Info
Opto Diode Corp. has announced the OD-110L, the first in a series of superhigh-power gallium aluminum arsenide (GaAlAs) infrared emitters. The devices feature ultrahigh optical output with a very narrow optical beam, making them suitable for night vision and other military imaging applications.
They are housed in a standard three-lead hermetically sealed TO-39 package to accommodate the small-size (0.6604 × 0.6604 mm) chip. There are four wire bonds on die corners, and all surfaces are gold-plated for durability. Typical total power output at 25 °C is 110 mW, and minimum output is 55 mW with a peak emission wavelength at 850 nm.
The absolute maximum rating at 25 °C (case) for power dissipation is 1000 mW, with a continuous-forward-current rating of 500 mW. The OD-110L lead-soldering temperature (1/16 in. from the case for 10 s) is 260 °C.
Storage and operating temperatures range from −40 to 100 °C, making the devices suitable for use in harsh environments and for integration into illuminators and markers, and systems using night vision goggles and cameras.
https://www.optodiode.com
/Buyers_Guide/Opto_Diode_Corporation/c11066
Published: March 2012
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