Definition of epitaxial deposition

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Photonics Dictionary

epitaxial deposition: Epitaxial deposition is a process used in semiconductor manufacturing and materials science to grow a thin crystalline layer, known as an epitaxial layer, on a substrate. The term epitaxial refers to the relationship between the crystal structures of the growing layer and the underlying substrate, where the deposited atoms align with the existing crystal lattice of the substrate. This results in a single-crystal structure, preserving the orientation and arrangement of atoms from the substrate.

Key features of epitaxial deposition include:

Crystal alignment: Epitaxial deposition ensures that the crystal structure of the growing layer matches that of the underlying substrate, maintaining a continuous and ordered lattice.

Atomic precision: The process allows for precise control over the thickness and composition of the deposited layer, providing atomic-level accuracy.

Uniformity: Epitaxial growth typically results in a uniform layer across the substrate surface, making it suitable for creating semiconductor devices with consistent properties.

There are various techniques for epitaxial deposition, including:

Chemical vapor deposition (CVD): A method where gases containing precursor molecules react on the substrate surface to deposit a thin film.

Molecular beam epitaxy (MBE): Involves evaporating atoms or molecules from a source and depositing them onto a substrate under ultrahigh vacuum conditions.

Metalorganic vapor phase epitaxy (MOVPE): Uses metalorganic precursors in a gas phase to grow epitaxial layers.

Epitaxial deposition is critical in the fabrication of integrated circuits and other semiconductor devices, where the precise control of crystal structure and material properties is essential for the functionality and performance of electronic components. It is also employed in the production of optoelectronic devices, sensors, and various other applications in materials science.