Epitaxial refers to the growth of a crystalline layer on a crystalline substrate in such a way that the orientation of the crystal lattice of the growing layer is related to that of the substrate. In other words, epitaxial growth involves the deposition of a thin film or layer of material onto a crystalline substrate in a way that maintains a well-defined relationship between the atomic arrangement of the layer and the substrate.
Epitaxial growth is commonly used in the manufacturing of semiconductor devices, such as integrated circuits. In this context, epitaxial layers are grown on a single crystal semiconductor substrate to create thin films with specific electrical properties. The process is carefully controlled to ensure that the crystal structure of the epitaxial layer aligns with that of the substrate, which can have a significant impact on the performance of the resulting semiconductor device.
The term "epitaxy" comes from the Greek words "epi," meaning "upon" or "over," and "taxis," meaning "arrangement." Epitaxial growth is characterized by the ordered arrangement of atoms in the deposited layer with respect to the substrate. The epitaxial process is essential for creating high-quality semiconductor materials with controlled properties for electronic applications.