Definition of GaN distributed feedback lasers

Bristol Instruments, Inc. - 872 Series LWM 10/24 LB

Photonics Dictionary

GaN distributed feedback lasers: GaN (gallium nitride) distributed feedback (DFB) lasers refer to a specific type of semiconductor laser based on Gallium Nitride materials and designed with a distributed feedback structure. These lasers are commonly used in optoelectronic devices, telecommunications, and other applications where compact, efficient, and high-performance semiconductor lasers are required.

Key components and features of GaN DFB lasers include:

Gallium nitride: GaN is a wide-bandgap semiconductor material that exhibits unique properties suitable for high-power and high-frequency applications. GaN-based devices, including lasers, are known for their ability to operate at short wavelengths in the blue and UV regions of the electromagnetic spectrum.

Distributed feedback structure: The DFB laser design includes a periodic grating structure along the length of the laser cavity. This grating acts as a distributed feedback mechanism, providing optical feedback at specific wavelengths. This structure helps to achieve single-mode emission and enhances the spectral and spatial characteristics of the laser output.

Wavelength control: The periodic grating in the DFB laser allows for precise control of the emitted wavelength. This is essential for applications where a specific wavelength is required, such as in optical communication systems.

Single-mode operation: The distributed feedback structure promotes single-mode operation, meaning that the laser emits light primarily at a single, well-defined wavelength. This is advantageous for applications that demand narrow linewidths and stable output.

Optoelectronic applications: GaN DFB lasers find applications in various optoelectronic devices, including Blu-ray players, high-density optical storage, medical equipment, and spectroscopy. They are also used in emerging technologies such as lidar (light detection and ranging) systems and quantum information processing.

Wide bandgap advantages: GaN's wide bandgap allows for operation at higher temperatures and power levels than traditional semiconductor materials. This property, combined with the distributed feedback design, contributes to the overall performance of GaN DFB lasers.

Efficiency and reliability: GaN DFB lasers are known for their high efficiency and reliability, making them suitable for demanding applications where stability and longevity are essential.