Soitec-Led Project Targets High-Frequency Semiconductors
BERNIN, France, Sept. 11, 2024 — Move2THz, a European research and industry consortium led by Soitec, has commenced work to develop a future generation of high-frequency semiconductors based on indium phosphide (InP). The 27-member consortium plans to lay the groundwork for a European supply and manufacturing ecosystem for InP semiconductors. The initiative further plans to address barriers to their wider adoption — including the cost and availability of InP-based advanced substrates.
InP devices can operate at frequencies approaching or exceeding 1 THz, offering superior speeds and increased energy efficiency compared to silicon technologies. These technologies are set to address applications ranging from photonics for mega datacenters and AI to radio frequency front-ends and integrated antennas critical for 6G mobile communication, sub-THz radar sensing, and beyond.
One of the principal goals of the project is to establish an InP-on-silicon global standard, which will facilitate upscaling of the wafer size and volume compatible with CMOS manufacturing capacities, while minimizing the use of rare InP resources.
The project is targeting the year 2030 for a mature InP ecosystem, coinciding with the expected ramp-up of 6G-associated technologies. By 2027, MoveTHz expects to provide competitive elements for the terahertz technology sector.
Consortium members include CEA-Leti, Eindhoven University of Technology, Smart Photonics, Chalmers University of Technology, ETH Zurich, the Ferdinand Braun Institute, and Microwave Photonics. The three-year project is a recipient of EU funding as well as top-up financing from the governments of France, Switzerland, Germany, Sweden, the Netherlands, and Belgium.
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Published: September 2024
Glossary
- indium phosphide
- Indium phosphide (InP) is a compound semiconductor material composed of indium (In) and phosphorus (P). It belongs to the III-V group of semiconductors, where elements from groups III and V of the periodic table combine to form a variety of important semiconductor materials. Indium phosphide is known for its favorable electronic and optical properties, making it widely used in the fabrication of optoelectronic devices.
Key features and properties of indium phosphide include:
Bandgap:...
- terahertz
- Terahertz (THz) refers to a unit of frequency in the electromagnetic spectrum, denoting waves with frequencies between 0.1 and 10 terahertz. One terahertz is equivalent to one trillion hertz, or cycles per second. The terahertz frequency range falls between the microwave and infrared regions of the electromagnetic spectrum.
Key points about terahertz include:
Frequency range: The terahertz range spans from approximately 0.1 terahertz (100 gigahertz) to 10 terahertz. This corresponds to...
BusinessSensors & DetectorsOptics6GwirelesssemiconductorsMaterialsindium phosphideterahertzTHzSoitecCEA-LetiEindhoven University of TechnologySMART PhotonicsChalmers University of TechnologyETH ZurichFerdinand Braun Institutemicrowave photonicsEuropeEuropean UnionMove2THzsupply chainEcosystemmanufacturingsilicon