Search
Menu
Lambda Research Optics, Inc. - DFO

Sheaumann Laser Expands, Relocates Operations

Facebook X LinkedIn Email
Sheaumann Laser Inc. has opened a new 57,800-sq-ft facility in Billerica, Massachusetts. The manufacturer of semiconductor lasers announced its expansion and relocation in July.

Supported by a $2.34 million grant from the Massachusetts Manufacturing Innovation Initiative (M2I2) and matching funds from the company, Sheaumann will increase both its workforce and production capabilities to meet demand for laser-based technologies in multiple industries. Sheaumann specifically plans to broaden its wafer growth capabilities, expanding its existing near-infrared gallium arsenide (GaAs) wavelength range offerings (780 to 1080 nm) to include indium phosphide (InP) wavelengths (1120 to 1875 nm).

“The M2I2 capital grant helps immensely in supporting Sheaumann’s passion for innovative technology by helping broaden our capabilities in laser growth to include InP wavelengths,” Sheaumann President Gary Sousa said. Sheaumann will rely on its new technologies and personnel to nearly double its current product line and continue competing with overseas foundries with production based exclusively in Massachusetts, Sousa said. The company anticipates growing its workforce by 40%.

The new facility triples the size of Sheumann’s original location and adds 15,000 sq ft of cleanroom space for manufacturing and R&D activities. The company also plans to construct an incubator space for photonics-based startups with complementary process needs.
PowerPhotonic Ltd. - Bessel Beam Generator MR 6/24


Published: August 2020
Glossary
indium phosphide
Indium phosphide (InP) is a compound semiconductor material composed of indium (In) and phosphorus (P). It belongs to the III-V group of semiconductors, where elements from groups III and V of the periodic table combine to form a variety of important semiconductor materials. Indium phosphide is known for its favorable electronic and optical properties, making it widely used in the fabrication of optoelectronic devices. Key features and properties of indium phosphide include: Bandgap:...
gallium arsenide
Gallium arsenide (GaAs) is a compound semiconductor material composed of gallium (Ga) and arsenic (As). It belongs to the III-V group of semiconductors and has a zincblende crystal structure. GaAs is widely used in various electronic and optoelectronic devices due to its unique properties. Direct bandgap: GaAs has a direct bandgap, which allows for efficient absorption and emission of photons. This property makes it suitable for optoelectronic applications such as light-emitting diodes...
LasersSheaumann LaserAmericasMassachusettsexpansionsemiconductor laser components and systemssemiconductor laser manufacturingindium phosphidegallium arsenideMassachusetts Manufacturing Innovation InitiativeBusinessfundingsemiconductor laserslight speed

We use cookies to improve user experience and analyze our website traffic as stated in our Privacy Policy. By using this website, you agree to the use of cookies unless you have disabled them.