Search
Menu
Meadowlark Optics - Wave Plates 6/24 LB 2024

Sensors Unlimited Receives Night Vision System Contract

Facebook X LinkedIn Email
PRINCETON, N.J., July 15 -- Sensors Unlimited Inc., a provider of imaging products based on indium gallium arsenide (InGaAs) technology, has received a contract from the Defense Advanced Research Project Agency (DARPA) for a nine-month, $890,000 program to develop what it says is the first all-solid-state night vision 640-by-512 pixel (25-micron pitch) room-temperature InGaAs camera, sensitive from 0.9 um to 1.7 microns, which will enable imaging under moonless night conditions with no perceptible image lag.

Sensors Unlimited's high-resolution InGaAs shortwave infrared (SWIR) night vision camera will be used in DARPA's multispectral adaptive networked tactical imaging sensor (MANTIS) program. The goal of MANTIS is to provide soldiers with multispectral imaging information while exploiting network access for collaborative visualization between soldiers. The US Army's Night Vision and Electronic Sensors Directorate will monitor the contract.

The camera system will be small, lightweight, low-power and capable of transmitting RS-170-compatible video as well as 14-bit digital imagery, the company said. The all-solid-state system is antiblooming and contains variable gain, permitting the camera to be used during day and night operations.

"The high resolution and high sensitivity will detect a camouflaged man at 100 m under starlight-only conditions," said Martin H. Ettenberg, director of imaging products at Sensors Unlimited.

"This is the next generation in night vision imaging technology, and will enable the US to continue its dominance in military imaging," said Chris Dries, vice president of research and development. "This contract underscores the military's confidence in our technological innovations and our commitment to imaging in the SWIR wavelength band."

For more information, visit: www.sensorsinc.com


Opto Diode Corp. - Detector Spotlight 10-24 MR

Published: July 2003
Glossary
indium gallium arsenide
Indium gallium arsenide (InGaAs) is a semiconductor compound composed of indium (In), gallium (Ga), and arsenic (As). It belongs to the III-V group of semiconductors and is commonly used in optoelectronic devices, photovoltaics, and high-speed electronics due to its unique properties. Bandgap engineering: The bandgap of InGaAs can be tailored by adjusting the ratio of indium to gallium atoms in the compound. By varying the composition, the bandgap can be tuned to cover a wide range of...
DARPAdefenseDefense Advanced Research Project Agencyindium gallium arsenideInGaAsNews & FeaturesSensors & DetectorsSensors Unlimited

We use cookies to improve user experience and analyze our website traffic as stated in our Privacy Policy. By using this website, you agree to the use of cookies unless you have disabled them.