Search
Menu
Opto Diode Corp. - Opto Diode 10-24 LB

Polycrystalline GermaniumEnables Near-IR Photodetectors Integrated with Silicon CMOS Electronics

Facebook X LinkedIn Email
A near-IR imaging chip based on polycrystalline germanium on silicon opens new frontiers for integrated optoelectronics.

Lorenzo Colace, Gianlorenzo Masini, Valentino O. Cencelli,
Francesco de Notaristefaniand Gaetano Assanto, Nonlinear Optics and OptoElectronics Laboratory, Università Roma Tre

In the past two decades, SiGe has been the material of choice for the development of near-IR (0.7 to 2 µm) optoelectronic devices based on silicon, and several groups have developed high-performance near-IR photodetectors on Si substrates.1 Nevertheless, the gap between engineering a good device and achieving its monolithic integration with very large scale integrated electronics on Si was not overcome until recently.2 Following the pioneering work of R. People3 and T.P. Pearsall,4 SiGe (i.e., alloys, multilayers, superlattices, etc., that combine both of these group-IV semiconductors)...Read full article

Related content from Photonics Media



    Articles


    Products


    Photonics Handbook Articles


    White Papers


    Webinars


    Photonics Dictionary Terms


    Media


    Photonics Buyers' Guide Categories


    Companies
    Published: December 2004
    CommunicationsenergyFeaturesnear-IRoptoelectronic devicesSensors & DetectorsSiGesilicon

    We use cookies to improve user experience and analyze our website traffic as stated in our Privacy Policy. By using this website, you agree to the use of cookies unless you have disabled them.