NY CREATES and Fraunhofer Institute for Photonic Microsystems IPMS (Fraunhofer IPMS) have established a joint development agreement to drive R&D focused on ferroelectric memory devices at the 300-mm scale. The agreement will combine the strengths of each organization to engineer, develop, and characterize these devices that are critical for advancing the memory development ecosystems of each respective organization. Deputy director of Fraunhofer IPMS Wenke Weinreich (left) and NY CREATES’ vice president of strategies, partnerships and new ventures and COO Paul Kelly signed a joint development agreement to drive R&D focused on the development of memory devices at the 300-mm scale. Courtesy of NY CREATES. “With the Center Nanoelectronic Technologies, Fraunhofer IPMS maintains a leading international competence center for the development of ferroelectric memories based on hafnium oxide," said Wenke Weinreich, deputy director of Fraunhofer IPMS. "These memory technologies are particularly promising for neuromorphic computing applications as they are very energy efficient, CMOS compatible, and scalable down to very small technology nodes.” Representatives from NY CREATES visited Fraunhofer IPMS last year to set concrete dates for a joint exchange. The meeting followed the signing of a memorandum of understanding between the organizations to collaborate on joint research projects, symposia, and workshops, as well as promoting scientific exchanges. In October of last year, NY CREATES’ Albany NanoTech Complex was designated as the location of the flagship National Semiconductor Technology Center facility, the CHIPS for America EUV Accelerator. As the first and only publicly owned high-numerical aperture extreme ultraviolet (EUV) lithography center in North America, the EUV Accelerator is expected to drive significant R&D based on EUV lithography.