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Cree Lighting Files Suit Against AXT

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SANTA BARBARA, Calif., June 12 -- Cree Lighting Co., a wholly owned subsidiary of Cree Inc., announced yesterday it has filed a lawsuit against AXT Inc., in the US District Court for the Northern District of California, seeking to enforce a patent relating to semiconductor devices manufactured using a gallium nitride-based buffer technology.

The patent, No. 5,686,738, "Highly Insulating Monocrystalline Gallium Nitride Thin Films," is owned by Boston University and exclusively licensed to Cree Lighting Co. Boston University is a co-plaintiff in the action. The complaint requests damages and an injunction against infringement.

Cree Lighting Co. develops solid-state technology for lighting and electronics devices using gallium nitride and silicon carbide materials. Cree makes semiconductor materials and devices based on silicon carbide, gallium nitride, silicon and related compounds; its products include blue, green and ultraviolet light-emitting diodes, near UV lasers, radio frequency and microwave devices and power switching devices for illumination, optical storage, wireless infrastructure and power switching.

For more information, visit: www.cree.com

Teledyne DALSA - Linea HS2 11/24 MR

Published: June 2003
Glossary
gallium nitride
Gallium nitride (GaN) is a compound made up of gallium (Ga) and nitrogen (N). It is a wide-bandgap semiconductor material that exhibits unique electrical and optical properties. Gallium nitride is widely used in the production of various electronic and optoelectronic devices, including light-emitting diodes (LEDs), laser diodes, power electronics, and high-frequency communication devices. Key points about gallium nitride (GaN): Chemical composition: Gallium nitride is a binary compound...
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