Search
Menu
PFG Precision Optics - Precision Optics 12/24 LB

BAE Systems and GlobalFoundries Partner on Semiconductors

Facebook X LinkedIn Email
FARNBOROUGH, England, June 24, 2024 — BAE Systems and GlobalFoundries (GF) have established a partnership to strengthen the supply of critical semiconductors for national security programs. Under the agreement, the companies will collaborate on long-term strategies for increasing semiconductor innovation and manufacturing in the U.S. with the joint goal of advancing the ecosystem for domestic fabrication and packaging of secure chips and solutions for use in aerospace and defense systems.

The companies will engage in long-term planning for emerging technologies and collaborate on research and development in a range of areas, including advanced semiconductor packaging and integration, gallium nitride on silicon chips, silicon photonics, and advanced technology process development.

The new non-exclusive collaboration builds upon the longtime relationship between BAE Systems and GF, and further brings together BAE Systems’ expertise in microelectronics for critical defense systems with GF’s expertise as a leading high-volume semiconductor manufacturer and an advanced supplier of secure, essential chips to the U.S. Department of Defense.

Both BAE Systems and GF were recently named as recipients of planned direct funding from the U.S. government as part of the CHIPS and Science Act.
PI Physik Instrumente - Photonics Alignment  MR ROS 12/24


Published: June 2024
Glossary
integrated photonics
Integrated photonics is a field of study and technology that involves the integration of optical components, such as lasers, modulators, detectors, and waveguides, on a single chip or substrate. The goal of integrated photonics is to miniaturize and consolidate optical elements in a manner similar to the integration of electronic components on a microchip in traditional integrated circuits. Key aspects of integrated photonics include: Miniaturization: Integrated photonics aims to...
gallium nitride
Gallium nitride (GaN) is a compound made up of gallium (Ga) and nitrogen (N). It is a wide-bandgap semiconductor material that exhibits unique electrical and optical properties. Gallium nitride is widely used in the production of various electronic and optoelectronic devices, including light-emitting diodes (LEDs), laser diodes, power electronics, and high-frequency communication devices. Key points about gallium nitride (GaN): Chemical composition: Gallium nitride is a binary compound...
Businesspartnershipcollaborationsemiconductorsmanufacturingproductionchipspackagingintegrated photonicsgallium nitridesiliconsilicon photonicsphotonic integrated circuitsPICsAmericasdefensemilitaryDepartment of DefenseDoDCHIPS Act

We use cookies to improve user experience and analyze our website traffic as stated in our Privacy Policy. By using this website, you agree to the use of cookies unless you have disabled them.