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AXT Reduces Beijing Workforce

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FREMONT, Calif., March 21 -- AXT Inc. announced it has reduced the workforce at its Beijing, China, manufacturing facility by approximately 100 positions, or about 15 percent, as part of its ongoing restructuring. The company will record a restructuring charge of approximately $0.1 million in the first quarter related to the reduction. It said it anticipates payroll and related expense savings of approximately $0.3 million annually.

AXT is a producer of compound semiconductor substrates for the fiber optics and communications industries. The company's Vertical Gradient freeze crystal growth technology produces gallium arsenide, indium phosphide and germanium wafers.

For more information, visit: www.axt.com

PI Physik Instrumente - Mirrors for Laser Comm MR LW 7/24

Published: March 2005
Glossary
gallium arsenide
Gallium arsenide (GaAs) is a compound semiconductor material composed of gallium (Ga) and arsenic (As). It belongs to the III-V group of semiconductors and has a zincblende crystal structure. GaAs is widely used in various electronic and optoelectronic devices due to its unique properties. Direct bandgap: GaAs has a direct bandgap, which allows for efficient absorption and emission of photons. This property makes it suitable for optoelectronic applications such as light-emitting diodes...
indium phosphide
Indium phosphide (InP) is a compound semiconductor material composed of indium (In) and phosphorus (P). It belongs to the III-V group of semiconductors, where elements from groups III and V of the periodic table combine to form a variety of important semiconductor materials. Indium phosphide is known for its favorable electronic and optical properties, making it widely used in the fabrication of optoelectronic devices. Key features and properties of indium phosphide include: Bandgap:...
AXTCommunicationsfiber opticsgallium arsenideGermanium Wafersindium phosphideindustrialNews & Featuressemiconductor substrates

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