Chalcogenide Perovskites Show Promise for Optoelectronics Applications
BUFFALO, N.Y., Dec. 30, 2019 — A new barium zirconium sulfide (BaZrS3) thin film, developed by a team at the University at Buffalo, combines strong light absorption with good charge transport — two qualities that could be useful for optoelectronics applications such as photovoltaics, photodetectors, and LEDs. The researchers made the BaZrS3 films by using a laser to heat up and vaporize barium zirconium oxide. The vapor was deposited on a sapphire surface, forming a film, and then converted into the final