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Optics Tech Pulse (7/20/2021)

Optics Tech Pulse

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Tuesday, July 20, 2021

Optics Tech Pulse is a special edition newsletter from Photonics Media and Bristol Instruments Inc. covering key developments in optics technology.

Inverted Material Design Brings Reflective Screen into Focus
Researchers from Chalmers University of Technology developed a new type of reflective screen — sometimes described as “electronic paper” — that offers optimal color display and uses ambient light to keep energy consumption to a minimum.

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Non-Contact Thickness Measurement - Bristol Instruments Inc.
Bristol's non-contact thickness gauges utilize the unique properties of light to precisely measure the critical parameter of thickness of transparent and semi-transparent materials. Measure up to 31 layers simultaneously without damage or deformation.

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Integrated Optical Frequency Can Now Be Manufactured at Scale
A collaboration between John Bowers from the University of California, Santa Barbara (UCSB) and Tobias J. Kippenberg from École Polytechnique Fédérale de Lausanne (EPFL) has yielded an integrated on-chip semiconductor laser and resonator capable of producing a laser microcomb.

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Rochester Researchers Use Spectral Filter in Kerr Resonator to Create Highly Chirped Laser Pulses
Researchers have produced ultrashort, extremely high-energy (chirped) laser pulses using a spectral filter in a Kerr resonator. The pulses created in the work remained stable in low quality-factor resonators, despite large dissipation.

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Embedded Vision Is Set for Application on a Massive Scale
Compact, efficient, and highly application specific, embedded vision technology increasingly offers performance and price points that would have been impossible to achieve only a few years ago. The steady advancement in capabilities has been driven by improvements in all component technologies, including sensors, optics, and processors.

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Thin-Film Approach and Monochromatic Laser Light Set Mark for Photovoltaic Cell Efficiency
Researchers at Fraunhofer Institute for Solar Energy Systems ISE have achieved a conversion efficiency of 68.9% for a III-V semiconductor photovoltaic cell based on gallium arsenide (GaAs) exposed to laser light of 858 nm. The mark is reportedly the highest efficiency yet achieved for the conversion of light into electricity.

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Improving Photoluminescence in Silicon Boosts PIC Performance
Researchers in Russia have increased photoluminescence (PL) in silicon using germanium quantum dots and a specially designed silicon photonic crystal.

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