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Key Suppliers
Opto Diode Corporation
Laser Components USA Inc.
Hamamatsu Corporation
BAE Systems Sensor Solutions
Chunghwa Leading Photonics Tech Co. Ltd.
Sensors Unlimited Inc.
Electro Optical Components Inc.
IRnova AB
Excelitas Technologies Corp.
Infrared Materials Inc.
VIGO Photonics
Balluff Inc.
Fermionics Opto-Technology
Teledyne Judson Technologies
31 products
Sensors & Detectors
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J22 & J23 InGaAs Detectors
Teledyne Judson Technologies
Type:
InGaAs
Light Spectrum:
NIR,SWIR
Multielement (8E – 32E) MCT/InAsSb Detectors
VIGO Photonics
Type:
Other
Photodiode NXIR-RF36
Opto Diode Corporation
Type:
Photodiodes
Active Area:
5 mm²
Responsivity @1064 nm:
0.38 A/W
Responsivity @850 nm:
0.65 A/W
PB55- Cooled PbSe Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
5.2 µm
Operating Temperature:
-65 to +90 °C
Peak D*:
Typ. 1.2 E+10 cm Hz 1/2 / W @ 90 Hz
PB50- Cooled PbSe Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
4.9 µm
Operating Temperature:
-65 to +90 °C
Peak D*:
Typ. 1.1 E+10 cm Hz 1/2 / W @ 90 Hz
PB45- Uncooled PbSe Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
4.7 µm
Operating Temperature:
-65 to +90 °C
Peak D*:
Typ. 6.0 E+09 cm Hz 1/2 / W @ 90 Hz
IG26- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.45 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.45 A/W
IG24- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.35 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.40 A/W
IG22- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.15 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.40 A/W
IG22- Extended InGaAs Arrays
Laser Components USA Inc.
Type:
InGaAs
Max. Resolution:
256
Scan Type & Rate:
Linear
kHz at Max. Res.:
4000
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
≥ 2.10 µm
Operating Temperature:
-40 to +50 °C
Pixel Size:
30 x 250 µm
IG19- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 1.65 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.05 A/W
IG17- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
NIR,SWIR
50% Cut-Off Wavelength:
≥ 1.65 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.05 A/W
MWIR Detection Module
VIGO Photonics
Type:
Other
InGaAs PIN Photodiodes
Excelitas Technologies Corp.
Type:
Photodiodes
LiTaO3 Single Channel Pyroelectric Detector
Laser Components USA Inc.
Type:
Other
Light Spectrum:
UV,VIS,NIR,SWIR,MWIR,LWIR
Detector Type:
Pyroelectric
Spectral Range:
from UV to LWIR
Differential Pyroelectric Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
UV,VIS,NIR,SWIR,MWIR,LWIR
Detector Type:
Pyroelectric
Spectral Range:
from UV to LWIR
Photodetector - SXUV100TF135B
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area:
100 mm²
Low Capacitance:
260 pF
Reverse Bias Voltage:
12V
Photodetector - SXUV100TF135
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area:
100 mm²
Low Capacitance:
260 pF
Reverse Bias Voltage:
12V
Photodiode UVG12
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV,VIS
Circular Active Area:
13.2 mm²
Detection Wavelength Range:
193 nm - 400 nm
Quantum Efficiency:
100% in UV and Visible Regions
Photodiode NXIR-5C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
NIR
Active Area (circular):
5 mm²
Responsivity @ 1064 nm:
0.35 A/W
Responsivity @850 nm:
0.62 A/W
DLaTGS Pyroelectric Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
UV,VIS,NIR,SWIR,MWIR,LWIR
Detector Type:
Pyroelectric
Spectral Range:
from UV to LWIR
Photodetector SXUV20C
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area (Circular):
20 mm²
Capacitance:
1.55 (typ.) to 3 (max.) nF
Rise Time:
2 µsec
BPR Series 200M Balanced Light Detection Module
Beijing Rofea Optoelectronics Co. Ltd.
Type:
InGaAs
Max. Resolution:
200MP
Light Spectrum:
XRAY,UV,VIS,NIR,SWIR,MWIR,LWIR,FIR,Multispectral
3dB bandwidth:
200MHz
Material type:
InGaAs/Si
High-Speed Silicon Photodiodes
OSI Optoelectronics Inc.
Type:
Photodiodes
Scan Type & Rate:
Area
Light Spectrum:
UV,VIS,NIR
350 to 1100:
nm
Package:
TO=46
Peak Responsivity:
0.50A/W @ 800 nm
Nd:YAG 1064-nm Optimized Photodetectors
OSI Optoelectronics Inc.
Type:
IR
Light Spectrum:
VIS,NIR
5 to 14 mm Active area:
diameters
Nd:YAG:
sensitivity
LGD Compact
Axetris AG
Type:
IR
Sensor Width:
50
Sensor Height:
163
Light Spectrum:
NIR
Target Gas:
CH4/C2H6
Target Gas:
CH4/CO2
Target Gas:
CH4
IDS3010
attocube systems AG
Type:
Other
7558 Series Laser Rangefinder Receiver/Processor
Analog Modules Inc.
Type:
Other
Sensor Width:
80
Scan Type & Rate:
Linear
Light Spectrum:
SWIR
Min./Max. Range:
50 m to 65 km
Multiple Target Resolution:
10 m typical
Range Accuracy:
1 m rms
Model 742DP Laser Spot Tracker
Analog Modules Inc.
Type:
Other
Sensor Width:
14
Scan Type & Rate:
Linear
Light Spectrum:
NIR
Dynamic Range:
>100,000:1
Linear Operation:
Up to 10 µW/quadrant
Minimum Signal:
200 nW
PDI-80-2G-K
LASERSCOM LLC
Type:
InGaAs
Light Spectrum:
NIR
Back Reflection:
-50 dB
Cut-off Frequency:
2 GHz
Dark Current:
0.03 nA
APDI-55-3G-K
LASERSCOM LLC
Type:
InGaAs
Light Spectrum:
NIR
Cut-off Frequency:
3 GHz
Dark Current:
5 nA
Multiplication Coefficient:
80
Sensors & Detectors Products
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