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Sensors & Detectors
CMOS
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Photodiodes
Other
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KP
MP
GP
Sensor Width
-
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Scan Type & Rate
Area
Linear
Frames (fps) at Max. Res.
-
kHz at Max. Res.
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FIR
LWIR
Multispectral
MWIR
NIR
SWIR
UV
VIS
XRAY
Key Suppliers
Opto Diode Corporation
Laser Components USA Inc.
Hamamatsu Corporation
Teledyne DALSA, Machine Vision OEM Components
BAE Systems Sensor Solutions
Chunghwa Leading Photonics Tech Co. Ltd.
Sensors Unlimited Inc.
Electro Optical Components Inc.
IRnova AB
EVK DI Kerschhaggl GmbH
Excelitas Technologies Corp.
Infrared Materials Inc.
VIGO Photonics
Balluff Inc.
Fermionics Opto-Technology
Teledyne Judson Technologies
41 products
Sensors & Detectors
Clear All Filters x
IR lens x
Sensing & Detection x
Sensors & Detectors x
J22 & J23 InGaAs Detectors
Teledyne Judson Technologies
Type:
InGaAs
Light Spectrum:
NIR,SWIR
Mid-IR Detector - BXT2S-28T
Opto Diode Corporation
Type:
IR
Light Spectrum:
MWIR
Active Area (Circular):
20 mm²
Capacitance:
1.55 (typ.) to 3 (max.) nF
Material:
PbSe
IR Detector BXF-2
Opto Diode Corporation
Type:
IR
Sensor Width:
2
Sensor Height:
2
Active Element Area:
4 mm²
Element Operating Temp.:
+23 °C
Peak Sensitivity (min.):
3.6 µm
IR Detector - BXP-25E
Opto Diode Corporation
Type:
IR
Light Spectrum:
NIR
Active Area:
4 mm²
Detectivity (D*) Ranges:
2.0 × 10(10) (D*)
Material:
PbSe
IR Detector - BXT2S-38T
Opto Diode Corporation
Type:
IR
Light Spectrum:
VIS,NIR
Active Area:
9 mm²
Material:
PbSe
ResponseTime:
12 µsec
IR Detector - BXT2S-68T
Opto Diode Corporation
Type:
IR
Light Spectrum:
VIS,NIR
Active Area:
36 mm²
Material:
PbSe
ResponseTime:
12 µsec
Embla 1055
IRnova AB
Type:
IR
Max. Resolution:
82KP
Sensor Width:
320
Sensor Height:
256
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
60
Light Spectrum:
LWIR
Gas Detected:
C2H2
Gas Detected:
NH3
Gas Detected:
SF6
Quad- 4-channel PbSe Detector w/ Filters: B1-5(M)-4 / B1-6C2T(M)-4
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
1.4 × 10^10 cm Hz^.5W^-1 min
Dark Resistance-cooled model:
2.5 M Ohm typ
Delta T for TEC:
50 °C
PbSe Non-Cooled Detectors: B2-5
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
1.8 × 10^ 10 cm Hz^.5W^-1 Typ
Dark Resistance:
1 M ohm
Package:
TO-5
PbSe Full- and Half-ball Lens Detectors: B1-5(M)-FL/L
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D* - Full-ball LENS:
1.0 × 10^11 cm Hz^.5W^-1 min
D*- Half-ball LENS:
4.5 × 10^10 cm Hz^.5W^-1 min
Dark Resistance:
1 M Ohm Typical
PbS Non-Cooled Detectors: A2-5
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
1 × 10^ 11 cm Hz^.5W^-1 Typ
Dark Resistance:
1 M Ohm Typical
Package:
TO-5
LDA512P25M-17-T1
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.512MP
Sensor Width:
25
Sensor Height:
250
Scan Type & Rate:
Linear
kHz at Max. Res.:
22
Light Spectrum:
SWIR
Operating Temperature:
-20
Outputs:
2
Pixel Operability:
>99%
FPA0640P15F-22-T2
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.64MP
Sensor Width:
640
Sensor Height:
512
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
240
Effective Pixel Array:
636×508
Operating Temperature:
+71~-40°C
Outputs:
2/4/8
FPA0640P15F-19-T2
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.64MP
Sensor Width:
640
Sensor Height:
512
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
240
Light Spectrum:
SWIR
Effective Pixel Array:
636×508
Operating Temperature:
+71~-40°C
Outputs:
2/4/8
FPA0320P30F-22-T2
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.32MP
Sensor Width:
320
Sensor Height:
256
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
346
Light Spectrum:
SWIR
Effective Pixel Array:
318x254
Operating Temperature:
+71~-40°C
Outputs:
1/2/4
FPA0320P30F-19-T2
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.32MP
Sensor Width:
320
Sensor Height:
256
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
346
Light Spectrum:
SWIR
Effective Pixel Array:
318×254
Operating Temperature:
+71~-40°C
Outputs:
1/2/4
Idun 1055
IRnova AB
Type:
IR
Max. Resolution:
327KP
Sensor Width:
640
Sensor Height:
512
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
60
Light Spectrum:
LWIR
Gas Detected:
C2H2
Gas Detected:
NH3
Gas Detected:
SF6
LC / LSC Extended Wavelength Linear PDA
Sensors Unlimited Inc.
Type:
InGaAs
Max. Resolution:
1024MP
Sensor Width:
25
Sensor Height:
25
Scan Type & Rate:
Linear
kHz at Max. Res.:
91
Light Spectrum:
SWIR
PB55- Cooled PbSe Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
5.2 µm
Operating Temperature:
-65 to +90 °C
Peak D*:
Typ. 1.2 E+10 cm Hz 1/2 / W @ 90 Hz
PB45- Uncooled PbSe Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
4.7 µm
Operating Temperature:
-65 to +90 °C
Peak D*:
Typ. 6.0 E+09 cm Hz 1/2 / W @ 90 Hz
IG26- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.45 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.45 A/W
IG24- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.35 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.40 A/W
IG22- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.15 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.40 A/W
IG19- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 1.65 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.05 A/W
IG17- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
NIR,SWIR
50% Cut-Off Wavelength:
≥ 1.65 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.05 A/W
InGaAs PIN Photodiode
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Light Spectrum:
SWIR
Aperture Size:
Ø 950 μm
Package Type:
TO-46 / 5P
Spectral Range:
0.9 - 1.7 μm
FPA0640P15F-17-T1 or T2
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
328KP
Sensor Width:
9.6
Sensor Height:
7.68
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
300
Light Spectrum:
SWIR
Package Type:
28-pin metal SDIP
Pixel Pitch:
15 μm
Quantum Efficiency:
>70%
FPA0640P15F-17-C
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
328KP
Sensor Width:
9.6
Sensor Height:
7.68
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
300
Light Spectrum:
SWIR
Array Format:
640 × 512
Package Type:
64-pin Ceramic LCC
Pixel Pitch:
15 μm
Photodiode UVG100
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
100
Sensor Height:
100
Light Spectrum:
UV
Active Area:
100 mm²
Quantum Efficiency:
100%
Responsivity (test conditions at 254 nm):
0.09 A/W typical
LE / LSE Series Linear Photodiode Array
Sensors Unlimited Inc.
Type:
InGaAs
Max. Resolution:
1024MP
Sensor Width:
25
Sensor Height:
250
Scan Type & Rate:
Linear
kHz at Max. Res.:
1.25
Light Spectrum:
SWIR
LDB / LSB Series Linear Photodiode Arrays
Sensors Unlimited Inc.
Type:
InGaAs
Max. Resolution:
512MP
Sensor Width:
25
Sensor Height:
250
Scan Type & Rate:
Linear
kHz at Max. Res.:
5
Light Spectrum:
SWIR
Photodiode NXIR-5C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
NIR
Active Area (circular):
5 mm²
Responsivity @ 1064 nm:
0.35 A/W
Responsivity @850 nm:
0.62 A/W
120 MP CMOS Sensor
Canon U.S.A. Inc., Industrial Products Div.
Type:
CMOS
Max. Resolution:
120MP
Sensor Width:
13280
Sensor Height:
9184
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
9.4
Light Spectrum:
VIS,NIR
Filter Types:
RGB, mono
Pixel pitch:
2.2 µm
Sensor Size:
29.22 x 20.20 mm
Photodiode - APX 158-03-007
Advanced Photonix
Type:
InGaAs
Sensor Width:
3.375
Sensor Height:
3.375
Scan Type & Rate:
Linear
Light Spectrum:
VIS,NIR,SWIR
Breakdown Voltage:
9 (typ.) V
Dark Current:
3 (typ.) to 04 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts):
3 kΩ
Photodiode - APX 158-02-003
Advanced Photonix
Type:
InGaAs
Sensor Width:
2.25
Sensor Height:
2.25
Scan Type & Rate:
Linear
Light Spectrum:
VIS,NIR,SWIR
Breakdown Voltage:
9 (typ.) V
Dark Current:
2.5 (typ.) to 20 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts):
2.2 kΩ
Mulit-Element Arrays
OSI Optoelectronics Inc.
Type:
Photodiodes
Scan Type & Rate:
Linear
Light Spectrum:
UV,VIS,NIR
UV-Enhanced:
A5V-35UV
High-Speed Silicon Photodiodes
OSI Optoelectronics Inc.
Type:
Photodiodes
Scan Type & Rate:
Area
Light Spectrum:
UV,VIS,NIR
350 to 1100:
nm
Package:
TO=46
Peak Responsivity:
0.50A/W @ 800 nm
2-Color Sandwich Detectors
OSI Optoelectronics Inc.
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Operation:
Photovoltaic
Spectral Range (TEC) Silicon/InGaAs_):
400-1800 nm
Spectral Range Silicon/InGaAs:
400-1800 nm
X1-UV-3727 UVC Radiometer
Gigahertz-Optik Inc.
Type:
UV
Sensor Width:
37
Sensor Height:
32
Light Spectrum:
UV
GSENSE400BSI-TVISB
Gpixel Inc.
Type:
sCMOS
Max. Resolution:
4MP
Sensor Width:
36.5
Sensor Height:
36.5
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
48
Light Spectrum:
UV,VIS,NIR
Dark Current:
0.03e-@-70C
Dynamic Range:
97.78 dB
Pixel Size:
11 µm
Silicon Photomultipliers (SiPMs)
First Sensor Inc.
Type:
Other
Light Spectrum:
VIS,NIR
Sensors & Detectors Products
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