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< Sensing & Detection
Sensors & Detectors
CMOS
sCMOS
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InGaAs
IR
UV
Photodiodes
Other
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KP
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Linear
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Key Suppliers
Opto Diode Corporation
Laser Components USA Inc.
Hamamatsu Corporation
Teledyne DALSA, Machine Vision OEM Components
BAE Systems Sensor Solutions
Chunghwa Leading Photonics Tech Co. Ltd.
Sensors Unlimited Inc.
Electro Optical Components Inc.
IRnova AB
EVK DI Kerschhaggl GmbH
Excelitas Technologies Corp.
Infrared Materials Inc.
VIGO Photonics
Balluff Inc.
Fermionics Opto-Technology
Teledyne Judson Technologies
14 products
Sensors & Detectors
Clear All Filters x
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Sensors & Detectors x
Quad- 4-channel PbSe Detector w/ Filters: B1-5(M)-4 / B1-6C2T(M)-4
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
1.4 × 10^10 cm Hz^.5W^-1 min
Dark Resistance-cooled model:
2.5 M Ohm typ
Delta T for TEC:
50 °C
EVK ABAS TL Inductive Metal Sensor
EVK DI Kerschhaggl GmbH
Type:
Other
J22 & J23 InGaAs Detectors
Teledyne Judson Technologies
Type:
InGaAs
Light Spectrum:
NIR,SWIR
FD80 Series InGaAs Photodiode
Fermionics Opto-Technology
Type:
Photodiodes
Photosensitvie Area:
80 μm dia.
Cooled PbSe Detector: B2-8C1T
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
2 × 10^10 typ
Dark Resistance:
2.5 M Ohm at -25 °C typical
Delta T for TEC:
50 °C
Photodiode NXIR-RF100C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
NIR
Active Area:
1 mm²
Responsivity @1064 nm:
0.35 A/W
Responsivity @850 nm:
0.62 A/W
Photodiode ODD-900-001
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
mm2
Operating Spectral Range:
730 nm - 1100 nm
Peak Sensitivity:
940 nm
Photodiode ODD-900-002
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
8 mm²
Operating Spectral Range:
400 nm - 1100 nm
Peak Sensitivity:
940 nm
S10226-10 CMOS Linear Image Sensor
Hamamatsu Corporation
Type:
CMOS
Max. Resolution:
1KP
Scan Type & Rate:
Linear
kHz at Max. Res.:
200
Light Spectrum:
UV,VIS,NIR,SWIR
Number of Pixels:
1024
Pixel Size:
7.8 um x 125 µm
Spectral Response Range:
400-1000 nm
Photodiode NXIR-5C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
NIR
Active Area (circular):
5 mm²
Responsivity @ 1064 nm:
0.35 A/W
Responsivity @850 nm:
0.62 A/W
UVC Detection SiC Photodiodes
Marktech Optoelectronics Inc.
Type:
Photodiodes
Photodiode - APX 158-03-007
Advanced Photonix
Type:
InGaAs
Sensor Width:
3.375
Sensor Height:
3.375
Scan Type & Rate:
Linear
Light Spectrum:
VIS,NIR,SWIR
Breakdown Voltage:
9 (typ.) V
Dark Current:
3 (typ.) to 04 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts):
3 kΩ
Photodiode - APX 158-02-003
Advanced Photonix
Type:
InGaAs
Sensor Width:
2.25
Sensor Height:
2.25
Scan Type & Rate:
Linear
Light Spectrum:
VIS,NIR,SWIR
Breakdown Voltage:
9 (typ.) V
Dark Current:
2.5 (typ.) to 20 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts):
2.2 kΩ
4x4 Silicon Array Detectors
OSI Optoelectronics Inc.
Type:
Photodiodes
Scan Type & Rate:
Area
Light Spectrum:
VIS,NIR
Active Area:
1.96 mm²
Capacitance:
75
Dimensions:
1.4 x 1.4 mm
Sensors & Detectors Products
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