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GaAlAs Lasers

A GaAlAs laser is a type of semiconductor laser diode that emits light in the near-infrared region of the electromagnetic spectrum. It is composed of layers of gallium, aluminum, and arsenic. This type of laser is widely used in various applications due to its specific properties and advantages. Learn more about GaAlAs lasers →

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Frankfurt Laser Company - Friedrichsdorf, Germany

Frankfurt Laser Company develops, produces, and distributes FP, DFB, and DBR laser diodes, laser diode arrays, VCSELs, and QCLs. Products include free-space, fiber-coupled, mid-IR, and superluminescent laser diode modules. Its products cover 213 nm to 20 micron wavelength and up to 5600 W power range.

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Glossary

gallium aluminum arsenide A crystalline semiconductor alloy used as the light confinement layer in both single- and double-heterostructure diode lasers.
GaAlAs laser A GaAlAs laser is a type of semiconductor laser diode that emits light in the near-infrared region of the electromagnetic spectrum. It is composed of layers of gallium, aluminum, and arsenic, hence the abbreviation GaAlAs, which stands for gallium...

GaAlAs Lasers Suppliersgallium aluminum arsenidelasers GaAlAslasers high-efficiencyMOCVDquantum well designTEC option for wavelength controlopen heat sink and window packagessolid-state laser pumpingmedicalophthalmicilluminationsemiconductor alloydiode lasers750 nm to 980 nm