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Edinburgh Instruments Ltd.
A Techcomp Instruments Europe Co.
Map1 Bain Square
Kirkton Campus
Livingston EH54 7DQ
United Kingdom
Phone: +44 1506 425300
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Raman and Photoluminescence Characterization of Gallium Nitride

Thursday, December 5, 2024
Due to its favorable thermal and electrical properties, gallium nitride (GaN) is a semiconductor with the potential to replace silicon in small, high powered electrical devices. Manufactures of such devices must ensure mechanical and electrical homogeneity to prevent adverse performance. In this application note, we demonstrate how Raman and photoluminescence microscopy can be used for characterization and analysis of GaN.

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