Last week, imec reported that it has demonstrated the integration of colloidal quantum dot photodiodes (QDPDs) on metasurfaces developed on its 300-mm CMOS pilot line. This approach enables a scalable platform for the development of compact, miniaturized SWIR spectral sensors, setting a new standard for cost-effective and high-resolution spectral imaging solutions, according to imec. By detecting wavelengths beyond the visible spectrum, SWIR sensors can reveal contrasts and features invisible to the human eye and can therefore see through certain materials such as plastics or fabrics, or challenging conditions like haze and smoke. Conventional SWIR sensors remain, however, expensive, bulky, and challenging to manufacture, restricting their use to niche applications. Quantum dot (QD) image sensors offer a promising alternative, combining lower cost with higher resolution. So far, however, they have operated in broadband rather than in spectral mode. (Left): imec has integrated colloidal quantum dot photodiodes on metasurfaces developed on 300-mm CMOS wafers. (Right): a scanning electron microscope image of a 300-mm CMOS wafer cross section. Courtesy of imec. Imec addressed this challenge by successfully cointegrating colloidal quantum dot photodiodes (QDPDs) with metasurfaces developed on the 300-mm CMOS pilot line. Quantum dots are nanoscale semiconductors that can be tuned to absorb specific infrared wavelengths, while metasurfaces are nano-patterned ultra-thin layers that precisely control how light interacts with the sensor. By combining these elements in a CMOS-compatible process, imec said it has created a scalable platform for miniaturized SWIR spectral detectors, delivering a compact, high-resolution sensor architecture that can be manufactured using standard CMOS processes. “What particularly sets this technology apart is its scalability,” said Vladimir Pejovic, R&D project lead at imec. “Traditional quantum dot image sensors require redesigning complex photodiode layers for every wavelength, which makes adjustments to each application’s spectrum complex and costly. Our approach shifts that complexity to the CMOS level, using metasurfaces to tune spectral response instead of altering the photodiode stack. This opens the door to easily customizable high-resolution spectral SWIR sensors and paves the way for new features in areas such as security, agriculture, automotive, aerospace, and beyond.” The next step in the work involves scaling the technology from proof of concept to low volume, and ultimately, full-scale manufacturing. To accelerate this transition, imec invites partners to collaborate. “Our ambition is to turn this breakthrough into an industry-ready platform,” said Pawel Malinowski, imec portfolio manager The technology was presented at the IEEE International Electron Devices Meeting (IEDM 2025).