FEI, CEA-Leti Team on Semiconductor Tech
Scientific instruments
maker !%FEI%! and CEA-Leti, a government-funded technological research organization
based in Grenoble, France, have signed a three-year agreement to characterize advanced
semiconductor materials for the 22-nm technology node and beyond. CEA-Leti, working
with its partners on the MINATEC micro- and nanotechnology innovation campus based
in Grenoble, will apply its expertise in holography to improve the sensitivity of
dopant profiling. FEI of Hillsboro, Ore., will provide nanobeam diffraction technology
to measure changes in strain and other crystallographic parameters with its Titan
scanning transmission electron microscope. The goal is to advance the technology
past the critical technical roadblocks facing the semiconductor industry as it tries
to push integrated circuit devices past the 22-nm barrier.
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