UK Group to Develop InP-Based Devices

A collaborative project has received £1.7 million from the UK’s Department of Trade and Industry to develop technologies for the uncooled operation of advanced InP-based photonic components. The 2 1/2-year project, called extended temperature optoelectronics, is intended to develop active devices containing aluminum and improved processes for the metallorganic vapor phase epitaxy growth of semi-insulating current blocking layers using ruthenium doping. Participants include Bookham, the Centre for Integrated Photonics, Epichem, Loughborough Surface Analysis, and the Universities of Sheffield and Surrey.