The XRL forum participants included Canon, NTT-AT, Mitsubishi, Sumitomo and Philtech, and US-based companies Rohm and Hass Electronic Materials (formerly Shipley), TOK/OHKA America, BAE Systems, the Massachusetts Institute of Technology Nanostructures Laboratory, the University of Wisconsin Center for Nanotechnology, the Louisiana State University Center for Advanced Microstructures and Devices and Grenon Consulting.
"Although many observers were surprised by the progress made by x-ray lithography (XRL) over the past few years, the mainstream silicon industry will continue to incrementally extend optical technology as long as possible," said Ronald A. Walrod, JMAR's CEO. "The current belief is that 193 immersion will meet industry needs to the 45-nm node and that EUV will be introduced at the 32-nm node in 2009."
Participants noted several significant achievements in XRL technology:
He said JMAR will also work to commercialize its technology in other markets, including homeland security, nanotechnology and biotechnology.
"Our recent $8 million financing facilitates our efforts to accelerate company growth in new markets through product development and constructive alliances," Walrod said.
JMAR Technologies, based in San Diego, develops highly specialized systems that employ x-ray lithography (which JMAR calls collimated plasma lithography, or CPL), to make semiconductors, and makes related products such as laser light sources, primarily for the US government.
For more information, visit: www.jmar.com