The program is sponsored by the Defense Advanced Research Projects Agency (DARPA). The prototype system will initially perform sub-130 nm lithography demonstrations using gallium arsenide semiconductors, to begin this summer.
The fully integrated conventional-footprint Model 5J lithography system consists of a 1 nm wavelength laser plasma light source developed by the JMAR Research division in California, combined with an advanced nanostepper designed and built by the JMAR/SAL NanoLithography division in Vermont.