InAlGaN Quantum Wells Boost UV Emission

Using InAlGaN-based multiple quantum wells fabricated on SiC, Japanese researchers from Riken in Saitama, Waseda University in Tokyo and Tokyo Institute of Technology in Yokohama have produced high-intensity 300- to 340-nm emissions at room temperature.

As described in the March 4 issue of Applied Physics Letters, the intensity of the 320-nm emission from this source is as strong as that of 410-nm emissions from InGaN-based quantum wells at room temperature. The researchers hope the source will aid development of deep-UV laser diodes and bright LEDs for use in applications such as high-density optical storage and high-efficiency lighting.