The third product in the Xero Wafer family, the 10-mm² Ga-facing GaN-on-Diamond semiconductor wafer has been unveiled by Group4 Labs LLC. Suitable for use in the epitaxial growth of GaN and its aluminum- and indium-based alloys, the technology enables the GaN layer to be atomically attached to a freestanding, 25-μm-thick, proprietary polycrystalline chemical-vapor-deposited diamond substrate. The wafer quickly dissipates the excessive heat buildup inside the chip’s engine, preventing device failure. It is shipped freestanding or on a disposable, silicon wafer mount.

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