The 63×× series near-IR high-brightness multimode diode lasers from JDSU
produce 10 W of continuous-wave power at 915, 940 or 976 nm from a 100-μm emitting aperture. Metallorganic chemical vapor deposition quantum well structures and low thermal resistance epi-down chip mounting result in minimum junction temperature at high optical power. Low junction temperature and low thermal resistance packages extend the lifetime of the diodes.
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